Journal
MATERIALS EXPRESS
Volume 8, Issue 1, Pages 105-111Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/mex.2018.1410
Keywords
rGOQDs; Graphene; Photodetector; UV; Capping Layer
Funding
- Fundamental and Advanced Research Project (Key Program) of ChongQing Municipality [cstc2015jcyjBX0046]
- National Natural Science Foundation of China (NSFC) [11574308, 61705229, 51402291]
- CAS Western Light Program
- Basic Scientific Research Program of Chongqing Science and Technology Commission [Cstc2016jcyjA0314]
- Hundred-Talent Program of Chinese Academy of Sciences
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Hybrid photodetector of graphene and reduced graphene oxide quantum dots (rGOQDs) is promising for deep-UV photodetection. However, these photodetectors are usually suffered from long response time and vacuum-required measurement environment. In this study, nitrogen-doped rGOQDs were synthesized by the improved Hummers method and DMF hydrothermal treatment approach, while DMF was used as a reducing reagent to enhance the photoresponse of rGOQDs. Hybrid photodetector with rGOQDs on graphene was fabricated using Al2O3, as capping layer. High photoresponsivity of 2.1 x 10(6) V/W and response time of 0.13 s were obtained at deep-UV under ambient environment, and enhanced photoresponse was observed in solar-blind wavelength compared to normal UV light. Furthermore, the integration of rGOQDs made a great improvement for graphene transistor characteristics, with a 5-fold mobility improvement and a shift of Dirac point of 50 V. This paper provide a feasible way for the fabrication of solar-blind photodetectors with high responsivity, fast response time and ambient condition performance, which are important for the community of photodetection.
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