Journal
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
Volume 51, Issue 2, Pages 1669-1677Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIA.2014.2347578
Keywords
Active voltage control (AVC); electromagnetic compatibility (EMC); gate drive; Gaussian reference; insulated-gate bipolar transistor (IGBT) converters
Funding
- Cambridge Overseas Trust
- Henry Lester Trust
- EPSRC [EP/L021579/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/L021579/1] Funding Source: researchfish
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High-performance power switching devices [insulated-gate bipolar transistors (IGBTs)] realize high-performance power converters. Unfortunately, with a high switching speed of the IGBT-freewheel diode chopper cell, the circuit becomes intrinsic sources of high-level electromagnetic interference (EMI). Therefore, costly EMI filters or shielding is normally demanded on the load and supply sides. An S-shaped voltage transient with a high-order time derivative eliminates the discontinuity in the switching transient and can suppress high-frequency spectrum of EMI emissions. More importantly, it provides an improved tradeoff between EMI generation and switching time, therefore switching losses. This promising tradeoff can be explored further for better high-frequency EMI suppression by using the infinitely differentiable characteristics of Gaussian S-shaped transients. However, current gate drive schemes cannot achieve the S shaping. In this paper, active voltage control is applied and improved successfully to define IGBT switching dynamics with a smoothed Gaussian waveform.
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