Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW. cm-2 figure-of-merit

A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated beta-Ga2O3 Schottky rectifiers with area 0.01 cm(2), fabricated on 10 mu m thick, lightly-doped drift regions (1.33 x 10(16) cm(-3)) on heavily-doped (3.6 x 10(18) cm(-3)) substrates, exhibited forward current density of 100A. cm(-2) at 2.1 V, with absolute current of 1 A at this voltage and a reverse breakdown voltage (VB) of 650V. The on-resistance (RON) was 1.58 x 10(-2) Omega.cm(2), producing a figure of merit (V-B(2)/R-ON) of 26.5 MW.cm(-2). The Schottky barrier height of the Ni was 1.04 eV, with an ideality factor of 1.02. The on/off ratio was in the range 3.3 x 10(6)-5.7 x 10(9) for reverse biases between 5 and 100V. The reverse recovery time was similar to 30 ns for switching from + 2V to -5V. The results show the capability of beta-Ga2O3 rectifiers to achieve exceptional performance in both forward and reverse bias conditions. (C) 2018 Author(s).