Journal
AIP ADVANCES
Volume 8, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5025204
Keywords
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Funding
- National Natural Science Foundation of China [11404169, 11704196]
- Scientific Research Foundation of Nanjing University of Posts AMP
- Telecommunications [NY217043]
- Postgraduate Research AMP
- Practice Innovation Program of Jiangsu Province [KYCX17_0754]
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Phase change memory is known as the most promising candidate for the next generation nonvolatile memory technology. In this paper, the microstructural changes of Ge2Sb2Te5 film, which is the most common choice of phase change memory material, has been carefully studied by the combination of several characterization techniques. The combination of resistance measurements, X-ray diffraction, Raman spectroscopy and X-ray reflectivity allows us to simultaneously extract the characteristics of microstructural changes during crystallization process. The existence of surface/interface Ge2Sb2Te5 layer has been proposed here based on X-ray reflectivity measurements. Although the total film thickness decreases, as a result of the phase transition from amorphous to metastable crystalline cubic and then to the stable hexagonal phase, the surface/interface thickness increases after crystallization. Moreover, the increase of average grain size, density and surface roughness has been confirmed during thermal annealing process. (C) 2018 Author(s).
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