Journal
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS
Volume 51, Issue 4, Pages 3368-3375Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIA.2015.2407055
Keywords
Cycle counting; lifetime estimation; power semiconductor reliability; rainflow algorithms; STATCOM
Funding
- U.S. Department of Energy
- Engineering Research Center Program of the National Science Foundation and DOE under NSF [EEC-1041877]
- CURENT Industry Partnership Program
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Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. The degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.
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