Journal
SCIENTIFIC REPORTS
Volume 8, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-018-27598-5
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- Ministry of Science and Technology of Taiwan [105-2221-E-005-059-MY3]
- Plasma Laboratory in Feng Chia University
- Center for Advanced Industry Technology and Precision Engineering in National Chung Hsing University
- Innovation and Development Center of Sustainable Agriculture from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan
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To acquire device-quality TiOx films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiOx even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron sputtering (HIPIMS), a highly stable p-type TiOx film with good quality can be achieved. In this research, by varying the oxygen flow rate, p-type-gamma-TiO and n-type TiO2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing-gamma-TiO and TiO2 as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm(2)/Vs, while their on/off current ratios are 1.7 x 10(4) and 2.5 x 10(5), respectively. The first presented p-type-gamma-TiO TFT is a major breakthrough for fabricating the TiOx based p-n combinational devices. Additionally, our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.
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