Journal
SCIENTIFIC REPORTS
Volume 8, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-018-25209-x
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Funding
- National Key R&D Program of China [2017YFA0305500, 2016YFC0207100]
- Science Technology and Innovation Committee of Shenzhen Municipality [JCYJ20170307093131123, JCYJ20160229165240684]
- Qilu young scholar program of Shandong University
- General Research Fund of the Research Grants Council of Hong Kong SAR, China [CityU 11275916]
- National Natural Science Foundation of China [11404162, 51672229, 51602314, 61504151]
- CAS-CSIRO project of the Bureau of International Co-operation of Chinese Academy of Sciences [122111KYSB20150064]
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Recently, owing to the large surface-area-to-volume ratio of nanowires (NWs), manipulation of their surface states becomes technologically important and being investigated for various applications. Here, an in-situ surfactant-assisted chemical vapor deposition is developed with various chalcogens (e.g. S, Se and Te) as the passivators to enhance the NW growth and to manipulate the controllable p-n conductivity switching of fabricated NW devices. Due to the optimal size effect and electronegativity matching, Se is observed to provide the best NW surface passivation in diminishing the space charge depletion effect induced by the oxide shell and yielding the less p-type (i.e. inversion) or even insulating conductivity, as compared with S delivering the intense p-type conductivity for thin NWs with the diameter of similar to 30 nm. Te does not only provide the surface passivation, but also dopes the NW surface into n-type conductivity by donating electrons. All of the results can be extended to other kinds of NWs with similar surface effects, resulting in careful device design considerations with appropriate surface passivation for achieving the optimal NW device performances.
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