Journal
RSC ADVANCES
Volume 8, Issue 15, Pages 8435-8441Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7ra10304b
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [11504086]
- Henan Provincial Key Science and Technology Project [13A140201, 18A140003]
Ask authors/readers for more resources
The magnetic properties of 1T-MoS2 and 1T-MoS2H subjected to equiaxial tensile strain are calculated using density functional theory. It is shown that in a strain-free state, 1T-MoS2 and 1T-MoS2H both exhibit magnetic behavior; as the strain increases, their magnetic properties show an increasing trend. This shows a significant difference from those of 2H-MoS2 and 2H-MoS2H. Based on Crystal Field Theory, the magnetic generation and variation of 1T-MoS2 and 1T-MoS2H are explained in this paper. The good tunable magnetic properties of 1T-MoS2 and 1T-MoS2H suggest that they could be applied as a spin injection source for spin electronics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available