Journal
RSC ADVANCES
Volume 8, Issue 37, Pages 20990-20995Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8ra02925c
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Funding
- National Natural Science Foundation of China [61674101]
- Shanghai Science and Technology Commission [17DZ2291500]
- National Key Research and Development Program of China [2016YFB0401105]
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In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique. The impact ofW doping on the film structure, surface morphology, optical properties and chemical compositions of ZTO thin films is analyzed by atomic force microscopy, X-ray diffraction, UV-visible spectroscopy and X-ray photoelectron spectroscopy. The results show that the WZTO thin films have a smooth surface, amorphous structure and fewer oxygen vacancies with increasing W levels. The oxygen vacancy concentration of WZTO thin films is reduced from 40% to 27% with W incorporation. Compared with films free of W doping, for example ZnSnO TFTs, the positive bias stress stability of WZTO TFTs and long-term stability in air are improved obviously and the shift of the threshold voltage (V-T) is restrained about six times. The critical reason for the improvement of the ZTO TFT properties is attributed to W-doping, wherein the suppression of oxygen vacancies by W ions plays a dominant role in changing the performance of ZTO thin films and the stability of TFTs.
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