Journal
RSC ADVANCES
Volume 8, Issue 35, Pages 19861-19867Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8ra01180j
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Funding
- Project of National Natural Science Foundation of China [51773030]
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Herein, NiO/TiO2 heterojunctions were fabricated by sol-gel spin coating on plastic substrates to investigate the effects of bending on resistive switching. The switching mechanism is well explained by the formation and rupture of oxygen-vacancy conducting filaments modulated by the p-n interface. Compared with that of the unbent film, the device ON/OFF ratio is slightly improved after 5000 bending repetitions. Finite element calculations indicate that the tensile stress of 0.79% can lead to the formation of channel cracks. Further charge transport analysis shows that the conducting filaments may cause an incomplete rupture because the bending-induced channel crack permeates through the p-n interface and reduces the local depletion-region width.
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