Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 30, Issue 3, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.3693593
Keywords
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Funding
- Semiconductor Research Corporation (SRC)
- Nanoelectronics Research Initiative (NRI)
- National Institute of Standards and Technology (NIST) through the Midwest Institute for Nanoelectronics Discovery (MIND)
- Office of Naval Research (ONR)
- National Science Foundation (NSF)
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Top-gated epitaxial graphene nanoribbon (EGNR) field effect transistors (FETs) were fabricated on epitaxial graphene substrates which demonstrated the opening of a substantial bandgap. Hydrogen silsesquioxane (HSQ) was used for the patterning of 10 nm size linewidth as well as a seed layer for atomic layer deposition (ALD) of a high-k dielectric aluminum oxide (Al2O3). It is found that the resolution of the patterning is affected by the development temperature, electron beam dose, and substrate materials. The chosen gate stack of HSQ followed by Al2O3 ALD permits stable device performance and enables the demonstration of the EGNR-FET. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.3693593]
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