Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 7, Pages 2170-2175Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2015.2434336
Keywords
Aluminum gallium arsenide (AlGaAs); energy harvesting; gallium arsenide (GaAs); photovoltaics
Funding
- National Science Foundation [DMR-1006154]
- Direct For Mathematical & Physical Scien [1006154] Funding Source: National Science Foundation
- Division Of Materials Research [1006154] Funding Source: National Science Foundation
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Indoor photovoltaic energy harvesting is a promising candidate to power millimeter (mm)-scale systems. The theoretical efficiency and electrical performance of photo-voltaics under typical indoor lighting conditions are analyzed. Commercial crystalline Si and fabricated GaAs and Al0.2Ga0.8As photovoltaic cells were experimentally measured under simulated AM 1.5 solar irradiation and indoor illumination conditions using a white phosphor light-emitting diode to study the effects of input spectra and illuminance on performance. The Al0.2Ga0.8As cells demonstrated the highest performance with a power conversion efficiency of 21%, with open-circuit voltages >0.65 V under low lighting conditions. The GaAs and Al0.2Ga0.8As cells each provide a power density of similar to 100 nW/mm(2) or more at 250 lx, sufficient for the perpetual operation of present-day low-power mm-scale wireless sensor nodes.
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