Room-temperature type-I GaSb-based lasers in the 3.0-3.7 μm wavelength range

GaSb-based type-I quantum-well lasers, emitting in the spectral range from 2 to 4 mu m are promising light sources for various trace gas sensing systems by means of tunable diode laser absorption spectroscopy (TDLAS). Excellent device performance has been achieved so far in the spectral range from 2 to 3 mu m, however, room-temperature operation above 3 mu m is much more difficult to achieve. In this work we demonstrate the extension of room-temperature operation wavelength of GaSb-based type-I lasers up to 3.73 mu m by implementation of high-quality quinternary AlGaInAsSb heterostructures.