Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 3, Pages 696-704Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2387288
Keywords
Atomistic modeling; band structure; density-functional tight binding (DFTB); oxide interface; silicon on insulator (SOI)
Funding
- University Grants Council, Hong Kong, within the Area of Excellence on Theory, Modeling and Simulation of Emerging Electronics [AoE/P-04/08]
- Small Project Funding Scheme through the University of Hong Kong, Hong Kong [201309176243]
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Ultimate scaling of Si MOSFETs leads to extremely thin and short channels, which are justifiably modeled at the atomic level. Currently, hydrogen passivation of the channel is used in device models, as a compromise between efficiency and accuracy. This paper advances the state of the art by adopting a density-functional tight-binding Hamiltonian, permitting the inclusion of the confining amorphous oxide explicitly in the simulation domain in a way similar to ab initio approaches. Band structure of silicon-on-insulator films of different thicknesses is studied with this method, showing good agreement with the experiment and revealing large quantitative differences in comparison with simulations of H-passivated Si film.
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