Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 6, Pages 1803-1810Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2015.2420597
Keywords
32 nm; CMOS; f(max); f(T); maximum oscillation frequency; millimeter wave; SiGe heterojunction bipolar transistor (HBT); silicon-germanium (SiGe); silicon-on-insulator (SOI); unity-gain frequency
Funding
- Georgia Institute of Technology, Atlanta, GA, USA
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This paper investigates the impact of the interconnect between the bottom and the top metal layers on the transistor RF performance of CMOS and silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technologies. State-of-the-art 32-nm silicon-on-insulator (SOI) CMOS and 120-nm SiGe HBT technologies are analyzed in detail. Measured results indicate a significant reduction in the unity-gain frequency (f(T)) from the bottom to the top metal layer for advanced CMOS technology nodes, but only a slight reduction for SiGe HBTs. The 32-nm SOI CMOS and SiGe HBT technologies have a reduction in the maximum oscillation frequency (f(max)) from the bottom to the top metal layer of similar to 12% and 5%, respectively. By analyzing technology scaling trends, it is clear that SiGe HBTs can now achieve a similar peak f(T) at the top metal layer in comparison with advanced CMOS technology nodes, and a significantly higher f(max). Furthermore, in CMOS technologies, the top metal layer f(max) appears to have reached a peak around the 45-65-nm technology nodes, a result which has significant implications.
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