Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 11, Pages 3727-3733Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2015.2475126
Keywords
Afterpulsing; CMOS avalanche photodiode (APD); dark count rate (DCR); fluorescence lifetime imaging (FLIM); positron emission tomography (PET); Raman; single-photon avalanche diode (SPAD); time gating
Funding
- CMC Microsystems
- Natural Sciences and Engineering Research Council (NSERC) ResEau Strategic Network
- Networks of Centres of Excellence India Canada Centre-Innovative Multidisciplinary Partnerships to Accelerate Community Transformation and Sustainability
- Canada Foundation for Innovation (CFI)
- FedDev Ontario
- Canada Research Chair (CRC) program
Ask authors/readers for more resources
The temperature-dependent afterpulsing characteristics of single-photon avalanche diodes (SPADs) fabricated in a standard digital 130-nm CMOS technology are described. Avalanche interarrival time statistics are analyzed to obtain the afterpulsing probabilities (APs) for 81-and 110-mu m(2) active area SPAD pixels using free running (FR) and time-gated (TG) front-end circuits. A strong reduction in AP was evident in the TG mode compared with the FR SPAD pixels. Optimal operating conditions in terms of hold-off time and temperature were found for <1% AP.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
