Journal
TERRAGREEN 2012: CLEAN ENERGY SOLUTIONS FOR SUSTAINABLE ENVIRONMENT (CESSE)
Volume 18, Issue -, Pages 1601-1610Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.egypro.2012.06.001
Keywords
Extraction; silicon solar cell; series and shunt resistances; dark I-V characteristics
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In this paper, a comparative analysis of three methods to determine the four solar cells parameters (the saturation current (Is), the series resistance (Rs), the ideality factor (n), and the shunt conductance (Gsh)) of the single diode lumped model from its dark curve is presented. These methods are based on Gromov, Werner, and Mikhelashviliet al. methods that were used to extract the Schottky diode parameters. These techniques have been adequately modi ed, extended to cover the case of solar cells and used to extract the parameters of interest from experimental I-V characteristic of a Poly-Si solar cell under dark condition. (C) 2010 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of The TerraGreen Society.
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