Writing and reading antiferromagnetic Mn2Au by Neel spin-orbit torques and large anisotropic magnetoresistance

Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Neel vector orientation. Here we demonstrate for Mn2Au, a good conductor with a high ordering temperature suitable for applications, reproducible switching using current pulse generated bulk spin-orbit torques and read-out by magnetoresistance measurements. Reversible and consistent changes of the longitudinal resistance and planar Hall voltage of star-patterned epitaxial Mn2Au(001) thin films were generated by pulse current densities of similar or equal to 10(7) A/cm(2). The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than similar or equal to 6% is reproduced by ab initio transport calculations.