Journal
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 6
Volume 9, Issue 6, Pages 1450-1453Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssc.201100665
Keywords
boron nitride; NEXAFS; silicon; ultra-thin film
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Funding
- Photon Factory Program Advisory Committee [2003G253]
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Chemical vapor deposition is employed to form hexagonal boron nitride (h-BN) monolayer films on Si(111) with a borazine precursor. The electronic structure and orientation of the films are analyzed by near edge X-ray absorption fine structure (NEXAFS) spectroscopy and X-ray photoelectron spectroscopy (XPS). XPS analysis shows that monolayer-level stoichiometric BN films were formed. The B K-edge NEXAFS spectra show two discrete peaks that have graphite-like polarization dependence in the low-energy region. Polarization dependence analysis of the NEXAFS indicates that the BN films had two-dimensional orientation on the Si(111) substrate. Based on the density functional theory calculations, these discrete peaks are assigned to pi* peaks at an intact h-BN site and edge B-H site. Comparison with the electronic structures of bulk h-BN and h-BN/Ni(111) clarifies that the interaction between the BN layer and Si substrate was very small. This indicates that the h-BN monolayer was physisorbed on Si(111), making a steep interface and conserving the intrinsic electronic structure.
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