Journal
IEEE PHOTONICS JOURNAL
Volume 10, Issue 2, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOT.2018.2820692
Keywords
InGaN; Multiple Quantum Wells; polarization; efficiency droop
Funding
- National Key R&D program of China [2016YFB0400402]
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We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization electric field. Highly excited photoluminescence measurement is performed by Ti-sapphire pulse laser with the maximal carrier density of 10(20) cm(-3). Under such high carrier density, the conventional InGaN/GaN MQWs (C-MQWs) have an additional nonradiative loss of carriers and suffer from the efficiency droop effect, while slight droop behavior is observed in the SL-MQWs sample. The results show that the substitution of AlGaN/InGaN superlattices as quantum barriers can effectively suppress the droop behavior at highly excited condition.
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