Modeling Ultrafast Electronic Processes in Solids Excited by Femtosecond VUV-XUV Laser Pulse

A detailed description of the method of calculation of electron inelastic scattering cross-section and mean free path in solid SiO2 is presented. The method is based upon the complex dielectric function formalism. It allows obtaining the inelastic mean free path of a charged particle in solids with high accuracy. The calculated inelastic mean free path of electrons in silicon dioxide presented in this contribution shows a very good agreement with the experimental data and with other theoretical calculations.