Study on the Impact of the Cutting Process of Wire Saw on SiC Wafers

Based on reciprocating electroplated diamond wire saw cutting SiC wafers experiments, the influences law of wire saw diameter, wire saw quality, wire saw speed, wire saw wear and cutting fluid on cutting rate and wafers surface quality was studied. The results indicate that cutting rate increase with wire saw diameter and wire saw speed increase, and decreases with wire saw wear; wafers surface roughness increase with wire saw diameter increase and wire saw wear and a slightly lower with wire saw speed increase; TTV (total thickness variation) is risen slightly with wire saw diameter increase; wire saw wear and insufficient cutting fluid supply are the main factors to cause cutting time increase and wafers quality decline. And the experimental results were analyzed.