Journal
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
Volume 62, Issue 8, Pages 761-765Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2015.2391632
Keywords
Energy-efficient computing; FinFET; near-threshold computing; standard cell library; 7-nm technology
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Funding
- Defense Advanced Research Projects Agency through the Power Efficiency Revolution for Embedded Computing Technologies (PERFECT) program
- National Science Foundation through the Software and Hardware Foundations
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FinFET devices have been proposed as a promising substitute for conventional bulk CMOS-based devices at the nanoscale due to their extraordinary properties such as improved channel controllability, a high ON/OFF current ratio, reduced short-channel effects, and relative immunity to gate line-edge roughness. This brief builds standard cell libraries for the advanced 7-nm FinFET technology, supporting multiple threshold voltages and supply voltages. The circuit synthesis results of various combinational and sequential circuits based on the presented 7-nm FinFET standard cell libraries forecast 10x and 1000x energy reductions on average in a superthreshold regime and 16x and 3000x energy reductions on average in a near-threshold regime as compared with the results of the 14-nm and 45-nm bulk CMOS technology nodes, respectively.
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