Journal
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
Volume 62, Issue 12, Pages 2806-2816Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSI.2015.2495723
Keywords
Analog switch; class-B amplifier; frequency compensation; high voltage integrated circuits; HV amplifier; LDMOS; level shifter; MEMS; off-isolation
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Funding
- Boston Micromachines Corporation (BMC) under grant of NASA's Small Business Innovation Research (SBIR) Program
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The paper presents a high-voltage integrated-circuit driver capable of producing analog voltages up to 300 V, using Dalsa's 0.8-mu m HV CMOS/DMOS process, suitable for MEMS and medical systems. The IC driver includes a HV operational amplifier (op-amp) with a class-B output stage, and HV analog switches with improved off-isolation performance. In contrast to previous frequency compensation schemes, where only one dominant pole occurs below the unity-gain bandwidth, the HV op-amp employs a novel frequency compensation topology with three poles and two zeros located within the unity-gain bandwidth, and is capable of driving large capacitive loads from 100 pF to 10 nF. Theoretical analysis of off-isolation of the HV analog switches is also reported and confirms the improvement in off-isolation performance.
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