Journal
VACUUM
Volume 155, Issue -, Pages 465-469Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.vacuum.2018.06.051
Keywords
Au nanoparticles; beta-Ga2O3:Nb film; RF magnetron sputtering; Semiconducting materials
Funding
- National Natural Science Foundation of China [60876006, 60376007]
- Funding for the development project of Beijing Municipal Education Commission of Science and Technology [KZ201410005008]
- Natural Science Foundation of Beijing City [4102014]
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The Nb-doped beta-Ga2O3 (beta-Ga2O3:Nb) thin films have been deposited on the p-Si and Au nanoparticles decorated p-Si substrates by radio frequency magnetron technique in argon ambient. All the annealed beta-Ga2O3:Nb films are composed of similar crystallite sizes obtained by XRD and SEM measurements. The beta-Ga2O3:Nb thin film grown on the Au nanoparticles decorated substrate shows lower transmittance and narrower band gap compared to that of grown on p-Si reference substrate. Photoluminescence intensity was quenched because of the short separation distance between semiconductor and the Au nanoparticles. The current density was enhanced and the barrier height of the beta-Ga2O3:Nb/p-Si heterojunction was reduced by inserting Au nanoparticles in the interface of beta-Ga2O3:Nb/p-Si heterojunction.
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