Journal
THIN SOLID FILMS
Volume 651, Issue -, Pages 42-47Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2018.02.011
Keywords
Transparent conducting oxide; X-ray diffraction; X-ray absorption near edge spectroscopy; Extended X-ray absorption fine structure; Energy band gap
Categories
Funding
- National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [NRF-2016R1D1A1A09918893]
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Zr-doped ZnO (Zn1-xZrxO, 0 <= x <= 0.067; ZZO) thin films were grown at room temperature by reactive radio frequency co-sputtering on quartz substrates The ZZO films have a strong preferred orientation toward the c-axis but this orientation weakened as x increased. The size of crystallites of the ZZO films decreased and the surfaces of the ZZO films smoothened as x increased. The Zn atom were divalent and slightly affected only in the c-axis. Zn K-edge X-ray absorption near edge structure (XANES) spectra of the ZZO films show that the Zn atom were divalent and slightly affected only in the c-axis. The Zr atoms were tetravalent and their K-edge XANES spectra were slight different from that of ZrO2. Polarization-dependent Zn K-edge extended x-ray absorption fine-structure (EXAFS) spectra revealed that the local structural variation was stronger along the c-axis than along other axes. The Zn atom site was well replaced by Zr atom regardless of x. Average optical transmittance in the visible region was >= 90%, and as x increased, optical band gap increased and blue-shifted.
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