Journal
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2
Volume 717-720, Issue -, Pages 169-+Publisher
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.717-720.169
Keywords
VLS growth; Selective epitaxy; p-type doping; Aluminum
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Funding
- French ANR in the framework of VHVD-SiC project [ANR-08-BLAN-0191-02]
- Agence Nationale de la Recherche (ANR) [ANR-08-BLAN-0191] Funding Source: Agence Nationale de la Recherche (ANR)
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Selective epitaxial growth in buried patterns was studied using the vapour-liquid-solid mechanism in Al-Si melt in order to obtain p+-doped SiC localized layers on 4H-SiC substrate. Homogeneous deposition with step bunched morphology was obtained by adding propane at room temperature before growth at 1100 degrees C. Patterns as large as 800 pm and as narrow as 10 pm were completely filled in this way. The deposition kinetics demonstrates that the process is self limited and mainly depends on the initial amount of Si in the liquid. The deposit is highly p-type doped and the p-n junction is demonstrated.
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