Journal
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2
Volume 717-720, Issue -, Pages 1089-+Publisher
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.717-720.1089
Keywords
4H-SiC; MOSFET; protective coating; high temperature; harsh environment; reliability
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In this work we present 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with a stable protective coating for harsh environment applications. Both inversion channel (IC) and buried channel (BC) MOSFETs were realized on n-4H-SiC substrates with a p-epilayer. Stacked ONO gate dielectric and Ti/TiN/Pt/Ti interconnect were used. Ni and Ti ohmic contacts in combination with a-SiOx/a-SiNy and a-SiOx/a-SiC protective coatings were compared. The MOSFETs showed excellent transistor characteristics up to 600 degrees C and exceptional stability during long-term aging at 600 degrees C in air and during accelerated aging at 700 degrees C including temperature cycling and air/moisture environment.
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