Journal
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2
Volume 717-720, Issue -, Pages 437-+Publisher
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.717-720.437
Keywords
4H-SiC MOSFETs; HRTEM; spatially-resolved EELS; SiC/SiO2 interface; Hall mobility
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Funding
- Programme Inter Carnot Fraunhofer (PICF) from BMB Fand ANR [01SF0804]
- Robert Bosch GmbH who provided the devices
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N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 interface were considered in relation with the measured Hall electron mobility.
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