Journal
IEEE SENSORS JOURNAL
Volume 15, Issue 9, Pages 4743-4748Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2015.2425657
Keywords
GaN MSM UV PDs; sputtered AlN; nucleation layer; responsivity; detectivity
Funding
- National Science Council of Taiwan [NSC 101-2221-E-218-023-MY2, NSC 101-2632-E-218-001-MY3]
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GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors (PDs) with ex situ sputtered AlN nucleation layer were investigated and demonstrated. The crystal quality, electrical, and optical properties of GaN PDs were improved using ex situ sputtered AlN nucleation layer. Compared with in situ AlN nucleation layer, it was found that the X-ray rock curve widths and yellow or blue bands of cathodoluminescence spectra of the PDs prepared by ex situ sputtered AlN nucleation layer were significantly reduced and smaller due to the improved crystal quality. It was also found that the dark current and responsivity of PDs with ex situ sputtered AlN nucleation layer were more effectively reduced and enhanced. Moreover, GaN MSM PDs with ex situ sputtered AlN nucleation layer could achieve the higher quantum efficiency and detectivity.
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