Journal
SOLID-STATE ELECTRONICS
Volume 142, Issue -, Pages 56-61Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2018.02.006
Keywords
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Funding
- National Research Foundation of Korea - Ministry of Science, ICT & Future Planning [NRF-2013M3C1A3063046]
- Samsung Electronics
- Institute for Information & Communications Technology Promotion (IITP) - Korean government (MSIP) [B0117-16-1004]
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Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).
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