Journal
SOLID-STATE ELECTRONICS
Volume 141, Issue -, Pages 65-68Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2017.12.008
Keywords
Double-gate; Field-effect transistor; Graphene; Transconductance
Funding
- Pioneer Research Center Program through the National Research Foundation of Korea - Ministry of Science, ICT & Future Planning [2012-0009600]
- Center for Integrated Smart Sensors - Ministry of Science, ICT & Future Planning as Global Frontier Project [CISS-2011-0031848]
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Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 mu S/mu m, that of the DG GFET was 25.7 mu S/mu m, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.
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