Journal
SOLID STATE SCIENCES
Volume 82, Issue -, Pages 84-91Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solidstatesciences.2018.05.010
Keywords
Mesoporous structure; Al-doped ZnO thin films; Strain/stress; Williamson-Hall analysis; Thermoelectric
Funding
- National Research Foundation of Korea grant - Korea government (MSIP) [2015R1A2A1A15054541]
- Center for Advanced Meta-Materials (CAMM) - Ministry of Science, ICT and Future Planning as Global Frontier Project (CAMM) [NRF-2014M3A6B3063716]
- MEST
- POSTECH
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea [20163030013980]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20163030013980] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2015R1A2A1A15054541, 2014M3A6B3063716] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, effects of induced stress and strain on the thermoelectric properties of mesoporous ZnO thin films with various Al doping concentrations were investigated. With Al doping in ZnO structure, the hexagonal wurtzite structure of ZnO was distorted owing to an ionic size difference between Al and Zn. With an increase in Al concentration to 4 at%, thermal conductivity unexpectedly decreased from 1.70 to 1.24 W/mK owing to an increase in the tensile strain, and electrical conductivity increased from 4 S/cm to 15S/cm owing to an increase in the carrier concentration. Based on this study, the relationship between the induced strain owing to lattice distortion and thermoelectric properties was investigated. Thus, 4 at% Al-doped mesoporous ZnO demonstrated best enhanced thermoelectric properties.
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