Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 185, Issue -, Pages 174-182Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.solmat.2018.05.034
Keywords
LeTID; n-type silicon; Hydrogen; Emitter diffusion; Hydrogen-induced degradation
Funding
- Australian Government through the Australian Renewable Energy Agency (ARENA) [ARENA 1-A060, 1-SRI001]
- Australian Centre for Advanced Photovoltaics (ACAP)
- Australian Research Council [DE170100620]
- U.K. Government through the International and Industrial Engagement Fund
- Supersilicon project - Engineering and Physical Sciences Research Council (EPSRC) [EP/M024911/1]
- Australian Commonwealth Government through the Australian Government Research Training Program Scholarship
- advanced hydrogenation project [ARENA 1-A060]
- UK Institution of Engineering and Technology (IET)
- A.F. Harvey Engineering Prize
- EPSRC [EP/M024911/1] Funding Source: UKRI
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In this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that affects both the bulk and surface related lifetimes. We identify three key behaviors of the degradation mechanism; 1) a firing dependence for the extent of degradation, 2) the appearance of bulk degradation when wafers are fired in the presence of a diffused emitter and 3) a firing related apparent surface degradation when wafers are fired in the absence of an emitter. We further report a defect capture cross-section ratio of sigma(n)/sigma(p) = 0.028 +/- 0.003 for the defect in n-type. Utilizing our understanding of light and elevated temperature induced degradation (LeTID) in p-type silicon, we demonstrate that the degradation behaviors in both n-type and p-type silicon are closely correlated. In light of numerous reports on the involvement of hydrogen, the potential role of a hydrogen induced degradation mechanism is discussed in both p- and n-type silicon, particularly in relation to the diffusion of hydrogen and influence of hydrogen-dopant interactions.
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