Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off

We report thin-film InAs/GaAs quantum dot (QD) solar cells with n - i - p(+) deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-in wafers. External quantum efficiency measurements demonstrate twofold enhancement of the QD photocurrent in the ELO QD cell compared to the wafer-based QD cell. In the GaAs wavelength range, the ELO QD cell perfectly preserves the current collection efficiency of the baseline single junction ELO cell. We demonstrate by full-wave optical simulations that integrating a micro patterned diffraction grating in the ELO cell rearside provides more than tenfold enhancement of the near infrared light harvesting by QDs. Experimental results are thoroughly discussed with the help of physics-based simulations to single out the impact of QD dynamics and defects on the cell photovoltaic behavior. It is demonstrated that non radiative recombination in the QD stack is the bottleneck for the open circuit voltage (V-OC) of the reported devices. More important, our theoretical calculations demonstrate that the V-OC offset of 0.3 V from the QD ground state identified by Tanabe et al., 2012, from a collection of experimental data of high quality III-V QD solar cells is a reliable - albeit conservative - metric to gauge the attainable V-OC and to quantify the scope for improvement by reducing non radiative recombination. Provided that material quality issues are solved, we demonstrate - by transport and rigorous electromagnetic simulations - that light-trapping enhanced thin-film cells with twenty InAs/GaAs QD layers reach efficiency higher than 28% under unconcentrated light, ambient temperature. If photon recycling can be fully exploited, 30% efficiency is deemed to be feasible.