P-GaSe/N-MoS2 Vertical Heterostructures Synthesized by van der Waals Epitaxy for Photoresponse Modulation

The important role of p-n junction in modulation of the optoelectronic properties of semiconductors is widely cognized. In this work, for the first time the synthesis of p-GaSe/n-MoS2 heterostructures via van der Waals expitaxial growth is reported, although a considerable lattice mismatching of approximate to 18% exists. According to the simulation, a significant type II p-n junction barrier located at the interface is expected to be formed, which can modulate optoelectronic properties of MoS2 effectively. It is intriguing to reveal that the presence of GaSe can result in obvious Raman and photoluminescence (PL) shift of MoS2 compared to that of pristine one, more interestingly, for PL peak shift, the effect of GaSe-induced tensile strain on MoS2 has overcome the p-doping effect of GaSe, evidencing the strong interlayer coupling between GaSe and MoS2. As a result, the photoresponse rate of heterostructures is improved by almost three orders of magnitude compared with that of pristine MoS2.