Journal
SMALL
Volume 14, Issue 9, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201703293
Keywords
2D materials; photodetectors; van der Waals heterostructures
Categories
Funding
- Major State Basic Research Development Program [2016YFA0203900, 2016YFB0400801]
- Key Research Project of Frontier Sciences of Chinese Academy of Sciences [QYZDB-SSW-JSC016]
- Natural Science Foundation of China [61404147, 61574152, 61674158, 61722408]
- Natural Science Foundation of Shanghai [16ZR1447600]
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Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light-emitting devices, and photodiodes. In this work, high-performance photovoltaic photodetectors based on MoTe2/MoS2 vertical heterojunctions are demonstrated by exfoliating-restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>10(5)) and ultralow dark current (approximate to 3 pA). Moreover, a fast response time of 60 mu s and high photoresponsivity of 46 mA W-1 are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications.
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