Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 27, Issue 10, Pages 1040-1043Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2015.2405611
Keywords
Mid-infrared; germanium; waveguides
Funding
- U.K. Engineering and Physical Sciences Research Council through the MIGRATION Project [EP/L01162X/1]
- Royal Society through the University Research Fellowship
- EPSRC [EP/K02423X/1, EP/L01162X/1, EP/L00044X/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/L01162X/1, 1238894, EP/L00044X/1, EP/K02423X/1] Funding Source: researchfish
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Germanium-on-silicon is a highly promising platform for planar photonics for the midinfrared, due to germanium's wide transparency range. In this letter, we report Ge-on-Si waveguides with record low losses of only 0.6 dB/cm, which is achieved using a 2.9-mu m thick germanium layer, thus minimizing mode interaction with dislocations at the germanium/silicon interface. Using these waveguides, multimode interferometers with insertion losses of only 0.21 +/- 0.02 dB are also demonstrated.
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