Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 256, Issue -, Pages 962-967Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2017.10.032
Keywords
Pt/NiO; Resistor-type; Ammonia; Schottky diode; Sensing response ratio
Funding
- National Science Council of the Republic of China [NSC-100-2221-E-006-244-MY3]
- Advanced Optoelectronic Technology Center, National Cheng Kung University
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The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH3/air, and fast speeds, at an optimal operating temperature of 300 degrees C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications. (C) 2017 Elsevier B.V. All rights reserved.
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