Journal
SENSORS
Volume 18, Issue 2, Pages -Publisher
MDPI
DOI: 10.3390/s18020494
Keywords
ambipolar transistor; chemical and biological sensors; device modeling; frequency response; small-signal model; electrophysiology; graphene field-effect transistor (GFET); graphene electrolyte-gated field-effect transistor (EGFET)
Funding
- Office of Naval Research [N00014-12-1-0959, N0014-16-1-2230]
- NASA Langley Research Center [NNX14AH11A]
- Army Research Office's Institute for Soldier Nanotechnologies [W911NF-13-D-0001 T.O.9]
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This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs.
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