Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 27, Issue 23, Pages 2445-2448Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2015.2468067
Keywords
Single-photon avalanche diode (SPAD); substrate isolation; low cross-talk; CMOS
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A wide spectral response standard CMOS single-photon avalanche diode enabling simplified circuit interface for large array realization is reported. In this letter, the conventional p(+)-nwell junction photon detection probability (PDP) profile is enhanced utilizing photo-carrier diffusion processes, resulting in a considerable expansion of the sensitivity spectrum of more than 30%. The proposed device achieves PDP greater than 40% from 440 to 580 nm at a low excess bias, while the dark count rate is 16 Hz/mu m(2) and timing jitter (full-width at half-maximum) is 95 ps when using a 405-nm laser.
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