Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 33, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/aab73d
Keywords
Gallium Nitride; p-n diode; avalanche breakdown; electroluminescence
Categories
Funding
- QuinStar ONR SBIR [N00014-16-P-2014]
- NSF CAREER [1719219]
- DARPA-YFA [D15AP00092]
- Materials Research Science and Engineering Center program of the NSF [DMR 1121053]
- NSF Graduate Research Fellowship Program [DGE 1144085]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1719219] Funding Source: National Science Foundation
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We report on the first observation of avalanche electroluminescence resulting from band-to-band recombination (BTBR) of electron hole pairs at the breakdown limit of Gallium Nitride p-n diodes grown homo-epitaxially on single crystalline GaN substrates. The diodes demonstrated a near ideal breakdown electric held of 3 MV cm(-1) with electroluminescence (EL) demonstrating sharp peaks of emission energies near and at the band gap of GaN. The high critical electric held, near the material limit of GaN, was achieved by generating a smooth curved mesa edge with low plasma damage, using etch engineering without any use of held termination. The superior material quality was critical for such a near-ideal performance. An electric held of 3 MV cm(-1) recorded at the breakdown resulted in impact ionization, confirmed by a positive temperature dependence of the breakdown voltage. The spectral data provided evidence of BTBR of electron hole pairs that were generated by avalanche carrier multiplication in the depletion region.
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