Journal
SCRIPTA MATERIALIA
Volume 151, Issue -, Pages 33-37Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2018.03.032
Keywords
Al-Mg-Si-Cu alloys; Interfacial segregation; Precipitates; HAADF-STEM; Atomic structure
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Funding
- Fundamental Research Funds for the Central Universities of China [106112017CDJQI308822]
- Major Project of Development and Application of Chongqing Science and Technology [cstc2015yykfC50001]
- Foundation for Innovative Research Groups of the National Natural Science Foundation of China [51421001]
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Cu segregation at the habit plane of lath-like beta' and QP2 precipitates for the over-aged Al-Mg-Si-Cu alloys were investigated by atomic resolution high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). An even number spacing of Cu segregation (d(Cu)) was found in the habit plane of the lath-like beta' and QP2 precipitates, which is caused by the strong interaction between the segregated Cu atoms and the Si atoms within the precipitates. The Cu segregation at habit plane of these precipitates can accommodate the lattice misfit that exists between beta' and alpha-Al matrix. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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