Journal
SCRIPTA MATERIALIA
Volume 150, Issue -, Pages 66-69Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2018.02.037
Keywords
Germanium; Palladium; Gallium; Contact; Reaction
Categories
Funding
- French National Agency for Research (ANR) through the program Science de l'ingenierie [ANR-12-JS09-0015-1]
- Agence Nationale de la Recherche (ANR) [ANR-12-JS09-0015] Funding Source: Agence Nationale de la Recherche (ANR)
Ask authors/readers for more resources
PdGe contact fabrication on Ge(001) wafers doped with Ga is investigated using conventional complementary metal-oxide-semiconductor processes. Despite a p-type doping level of similar to 1.4 x 10(20) cm(-3), the resistivity of the PdGe contact is found to be twice higher than that of undoped Ge. Ga doping has no influence on the Pd reaction with Ge. However, the doping process and the Salicide process led to the formation of Ga-Pd defects in both sides of the PdGe/Ge interface, resulting from Ga and Pd co-segregation on Ge dislocation loops. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
