Journal
PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012)
Volume 27, Issue -, Pages 197-202Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.egypro.2012.07.051
Keywords
Si solar cells; 3-D device simulation; PERC; high sheet resistance emitter; electro-plated Cu contacts
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In this work three-dimensional (3-D) numerical simulations, validated by the experimental measurements of a reference cell, have been performed to optimize the rear contact geometry of a PERC-type solar cell, featuring a high sheet resistance (140 Omega/sq) phosphorus-doped emitter and a front-side metallization with narrow and highly-conductive electro-plated copper lines (40 mu m wide) on lowly resistive Ti contacts. The simulation results show that an optimization of the rear point contact design potentially leads to an efficiency improvement of 0.68%(abs) compared to the reference cell. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.
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