4.6 Article

A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors

Journal

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 25, Issue 6, Pages 397-399

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2015.2421336

Keywords

Coplanar waveguide (CPW); HEMT; low noise amplifier (LNA); MMIC; MM-Wave; sub-millimeter wave

Funding

  1. DARPA THz Electronics Program
  2. Army Research Laboratory under the DARPA [HR0011-09-C-0062]

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In this letter, the first packaged THz solid-state amplifier operating at 0.85 THz is reported. The InP HEMT amplifier achieves a noise figure as low as 11.1 dB with an associated gain of 13.6 dB at 0.85 THz using high f(MAX) InP HEMT transistors in a 10-stage coplanar waveguide integrated circuit. Output power up to 0.93 mW is measured.

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