4.8 Article

Observation of an environmentally insensitive solid-state spin defect in diamond

Journal

SCIENCE
Volume 361, Issue 6397, Pages 60-63

Publisher

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aao0290

Keywords

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Funding

  1. NSF under the EFRI ACQUIRE program [1640959]
  2. Princeton Center for Complex Materials, a Materials Research Science and Engineering Center [DMR-1420541]
  3. Air Force Office of Scientific Research [FA9550-17-0158]
  4. National Science Scholarship from the Agency for Science, Technology, and Research (A*STAR) of Singapore
  5. Emerging Frontiers & Multidisciplinary Activities
  6. Directorate For Engineering [1640959] Funding Source: National Science Foundation

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Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid-state platform. We report a color center that shows insensitivity to environmental decoherence caused by phonons and electric field noise: the neutral charge state of silicon vacancy (SiV0). Through careful materials engineering, we achieved >80% conversion of implanted silicon to SiV0. SiV0 exhibits spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second. Its optical properties are very favorable, with similar to 90% of its emission into the zero-phonon line and near-transform-limited optical linewidths. These combined properties make SiV0 a promising defect for quantum network applications.

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