Journal
SCIENCE
Volume 360, Issue 6394, Pages 1214-+Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aar4851
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Funding
- Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division [DE-SC0018171]
- NSF MRSEC [1719797]
- UW Innovation Award
- DOE BES [DE-SC0012509]
- Croucher Foundation (Croucher Innovation Award)
- UGC of HKSAR [AoE/P-04/08]
- HKU ORA
- U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division
- Elemental Strategy Initiative
- JSPS KAKENHI [JP15K21722]
- Cottrell Scholar Award
- State of Washington
- Boeing Distinguished Professorship in Physics
- [NSF-DMR-1708419]
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Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.
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