Journal
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 8-9
Volume 9, Issue 8-9, Pages 1809-1812Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssc.201100613
Keywords
MBE; ZnO; GaAs; ZnSe
Funding
- NSF [ECCS-1028364, HRD-0833180]
- Army Research Office [W911NF0810419]
- PSCUNY Award
- Direct For Education and Human Resources
- Division Of Human Resource Development [833180] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1028364] Funding Source: National Science Foundation
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ZnO thin films were grown by plasma-assisted MBE on GaAs substrates with ZnSe buffer layers. GaAs with different orientations: (001), (111) A, and (111) B were investigated. X-ray diffraction measurements showed that ZnO grown on (111) B GaAs substrates have the best structural quality. All the samples showed good optical qualities as indicated by room temperature photoluminescence measurements. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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