Bilayer Pseudo-Spin Field Effect Transistor (BiSFET): Concepts and Critical Issues for Realization

The Bilayer pseudo-spin Field Effect Transistor (BiSET) has been proposed as one means of taking advantage of possible room temperature superfluidity in two graphene layers separated by a thin dielectric. In principle, the switching energy per device could be on the scale of 10 zJ, over two orders of magnitude below estimates for end-of the roadmap CMOS transistors. However, achieving both the goal of room temperature superfluidity and harnessing it for low-power switching pose substantial challenges, both theoretical and experimental. In this work we review the basic graphene superfluidity and BiSFET concepts, our current understanding-and limits to that understanding-of the requirements for condensate formation, and how these requirements could impact BiSFET design.